摘要
This study presented the development of multioxide thin films Al-Zn-Mn-Cu-Fe (AZMCF) oxide deposited by RF sputtering as photosensor materials. The photodetector characteristics were measured using a sandwich-structured device (size: 0.195 cm(2)) consisting of a p(+)-Si substrate (similar to 10(-3) Omega<middle dot>cm), an AZMCF oxide thin film (>40 M Omega<middle dot>cm), and an indium-tin oxide (ITO) thin film on top (similar to 1 k Omega<middle dot>cm) as a top electrode. The AZMCF oxide thin films showed spectral sensitivity across a broad range of wavelengths (365-950 nm), with the peak responsivity of 1.042 A W-1 achieved under the near-infrared (NIR) (950 nm) illumination at a bias voltage of -2 V. Furthermore, the device exhibited a fast response time, with a rise time (t(rise)) of 32 mu s, a fall time (t(fall)) of 119 mu s, and a low dark current density (J) of 0.09 A m(-2). These findings suggested the potential of AZMCF oxide thin films for photosensor applications operated under a wide range of wavelength illumination.