Abstract
Visible light-emitting diodes (LEDs) emitting at 615 nm and employing the AlGaInP/GaInP double heterostructure (DH) grown on a lattice-matched GaAs 0.7 P 0.3 substrate have been fabricated for the first time. The external quantum efficiency of 0.156% for the orange LEDs can be achieved by introducing the GaP material as the current spreader and window layer for the DH LEDs.