Abstract
Molecular beam epitaxy grown Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 )/In 0.20 Ga 0.80 As/GaAs has been rapidly thermal annealed to 850 °C in N 2 . The hetero-structure remained intact, with the In 0.20 Ga 0.80 As/GaAs interface being free of misfit dislocation and In 0.20 Ga 0.80 As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga 2 O 3 (Gd 2 O 3 ) as a dielectric with an in situ Al 2 O 3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 °C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology. © 2010 IOP Publishing Ltd.