Abstract
Al 0.33 Ga 0.32 In 0.35 P/Ga 0.65 In 0.35 P double-heterostructure (DH) light-emitting diodes (LEDs) grown on GaAs 0.7 P 0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. We investigate the band gap energy as a function of Al composition in the undoped Al x Ga 0.65-x In 0.35 P alloy with x = 0.0-0.195. Effects of Si and Zn doping on electrical properties have been examined by using disilane and dimethylzinc sources. The DH LED on a bare chip exhibits an emission wavelength around 615 nm and an external quantum efficiency of 0.156% at 20 mA. © 1994.