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AlGaN/GaN high electron mobility transistor based sensors for environmental and bio-applications
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AlGaN/GaN high electron mobility transistor based sensors for environmental and bio-applications

B.H. Chu, Y.L. Wang, H.T. Wang, C.Y. Chang, C.F. Lo, S.J. Pearton, G. Papadi, J.K. Coleman, B.J. Sheppard, C.F. Dungen, …
Nanoscience and Nanotechnology Letters, 卷.2(2), 頁碼.120-128
06/2010

摘要

AlGaN/GaN HEMT Lactic Acid Mercury Ion Perkinsus sp Vitellogenin Materials Science (all)
A promising sensing technology utilizing AlGaN/GaN high electron mobility transistors (HEMTs) has been developed to analyze a wide variety of environmental and biological gases and liquids.The conducting 2DEG channel of GaN/AlGaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. Examples of detecting mercury ions, Perkinsus sp. protozoan pathogens of marine molluscs, lactic acid, and an endocrine disrupter biomarker (vitellogenin) are discussed in this paper. Detection limits of 10-7 M, 5 μg/ml and 167 nM for mercury ions, vitellogein and lactic acid, respectively, were achieved. © 2010 American Scientific Publishers.

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