Abstract
The alleviation of cracking of the TiN-ARC layer on Al-Cu and Al-Cu-Si films after the development process has been achieved. For the TiN-ARC/Al-Cu system, the stress-induced defects decreased with increaseing TiN-ARC layer thickness. In contrast, for the TiN-ARC/Al-Cu-Si system, Si nodules formed during cooling, thereby inducing poor coverage with high aspect-ratio holes. As a result, the photoresist developer penetrated through the films. Chemical vapor deposition of TiN-ARC or predeposition of a Ti interposing layer was used to eliminate the formation of Si nodules.