Abstract
Manipulated bias control of a selector to a memristor was demonstrated in Zn-doped amorphous SiO x (SZO) films, within which ZnO x /Zn nanoclusters were segregated. For the selector, namely diode-like (pre-forming) switching, the threshold voltage varied from 9 to 2.7 V, with a resistance ratio of ∼10 4 , by tuning the concentration of ZnO x /Zn nanoclusters. Stable bipolar resistive switching was achieved by current-controlled RESET and voltage-controlled SET processes. The working mechanism of the selector was explained by a transport mechanism which involved the "generalized trap-assisted tunnelling" of electrons resulting from doping with ZnO x /Zn nanoclusters. The dual-switching-mode of SZO provides a promising application for 3D cross-bar RRAM. © 2014 the Partner Organisations.