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An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications
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An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh, Riichiroh Shirota, Masaki Momodomi 和 Fujio Masuoka
IEEE Transactions on Electron Devices, 卷.37(1), 頁碼.290-296
1990
DOI: https://doi.org/10.1109/16.43828

摘要

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current. © 1990 IEEE

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