摘要
The idea of limited reaction is employed to solve the adhesion and stability problems of Mo/n-GaAs and Pd/n-GaAs contacts by interposing a thin Pd layer between the Mo and GaAs. The structural and electrical properties of Mo/Pd/n-GaAs with different thicknesses of Pd layer, annealed at 300°C up to 500°C for 30 min, were investigated. Adhesion of Mo to GaAs has been improved with the interposition of a thin Pd layer. With increasing interposed Pd thickness, wider temperature ranges were achieved in which the contact showed rectifying Schottky behavior. The Schottky barrier heights kept nearly constant below 300°C and then dropped sharply at 450°C, except those of Mo(2000)/Pd(200 Å)/n-GaAs diodes. The ideality factors converged to nearly unity at 300°C then increased sharply from 300 to 500°C, except those of Mo(2000 A)/Pd(200 A)/n-GaAs diodes, which maintained nearly a constant of 1.34 from 400 to 500°C. © 1988 IEEE.