摘要
This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn IB) in n-channel HfO 2 /TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless, in this paper, the opposite is found in our experiment. Therefore, two different measurement techniques are employed, with the body current attributed to electrons in the inversion layer under the grounded source/drain. This indicates that the dominant mechanism is AHI rather than electron tunneling from the valence band. Moreover, the abn IB is dominated by tunneling mechanisms because it is independent of temperature.