Abstract
As the gate oxide thickness is vigorously scaled down quantization-induced charge layer thickness in MOSFET's has to be considered for accurate MOSFET intrinsic capacitance modeling for circuit simulation. We report in this paper an analytical MOSFET intrinsic capacitance model incorporating the concept of charge layer thickness which was developed based on the self-consistent solution of the Schrodinger and Poisson equations with Fermi-Dirac statistics. The results demonstrate that this model has excellent accuracy and simulation performance. © 1999 IEEE.