Abstract
Electron g-factors have been determined in GaInAs-AlInAs heterojunctions using the tilted field method. The g-factor is found to be enhanced with values of |g * | up to 15.5, compared with a bulk g * = - 3. |g * | increases with increasing spin splitting providing evidence that the enhancement is due to many-body effects dependent upon a difference in spin populations. The deduced value of |g * | is also found to be dependant upon the position of the Fermi level relative to the spin split Landau levels. © 1983.