摘要
X-ray diffraction and transmission electron microscopy, along with electrical and film stress measurements, were used to evaluate the effectiveness of 40-nm-thick amorphous Ta N and microcrystalline TaN diffusion barriers, both single and multilayered, against Cu penetration. Failure of the single-layered Ta N diffusion barrier upon annealing is initialized by crystallization/ grain growth, mainly helped by frozen-in compressive stress (3-4 GPa) to transform itself into a columnar structure with a comparable grain size to the thickness of the barrier. However, when subjected to annealing, the Ta N/TaN alternately layered diffusion barrier with an optimum bilayer thickness (10 nm) remains almost stress-free (0-0.7 GPa) and transforms itself into an equiaxed structure with grain sizes of only ≤3 nm. Such quasisuperlattice films can present lengthening and complex grained structures to effectively block Cu diffusion, thus acting as much more effective barriers than Ta N (and TaN) single-layered films. © 2000 American Institute of Physics.