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An ultra-low-power 24 GHz low-noise amplifier using 0.13 μm CMOS technology
Journal article   Peer reviewed

An ultra-low-power 24 GHz low-noise amplifier using 0.13 μm CMOS technology

Wei-Han Cho and Shawn S. H. Hsu
IEEE Microwave and Wireless Components Letters, Vol.20(12), pp.681-683
12/2010

Abstract

CMOS k-band low power low-noise amplifier (LNA)
This study presents an ultra-low-power 24 GHz low-noise amplifier (LNA) using 0.13 μm CMOS technology. We propose of using the minimum noise measure (M MIN ) as the guideline to determine the optimal bias and geometry of the transistors in the circuit. The power-constrained simultaneous noise and input matching (PCSNIM) technique is also employed for this design. With the proposed design approach, the LNA achieves a peak gain of 9.2 dB and a minimum NF of 3.7 dB under a supply voltage of 1 V. The associated power consumption is only 2.78 mW. © 2010 IEEE.

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