Abstract
The supply of reacting molecules by mass transfer is an important aspect for MOCVD processes. In this paper, we have analyzed the effects of mass transfer on growth rates of CdTe, with special consideration to thermal diffusion. Our results indicate that the calculated growth rates will be reduced by 15% at a temperature gradient of 100°K/cm to about 53% at 300°K/cm, if compared with the growth rates for isothermal conditions. However, at 900°K or higher, the equilibrium conditions at the surface will give rise to significant increase in backflux and become eventually the dominant factor in growth rates. © 1987 Taylor & Francis Group, LLC.