Analysis of the electronic states of phosphorus interstitials in phosphorus-implanted copperindium disulfide by the molecular orbital approach

Y.J. Hsu; H.L. Hwang

doi:10.7567/JJAPS.32S3.456

Analysis of the electronic states of phosphorus interstitials in phosphorus-implanted copperindium disulfide by the molecular orbital approach

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Analysis of the electronic states of phosphorus interstitials in phosphorus-implanted copperindium disulfide by the molecular orbital approach

Y.J. Hsu 和 H.L. Hwang

Japanese Journal of Applied Physics, 卷.32(S3), 頁碼.456-458

1993

DOI: https://doi.org/10.7567/JJAPS.32S3.456

摘要

CulnS2

Molecular orbital calculation

P-type doping pulsed electron beam annealing EPR

Engineering (all)

Physics and Astronomy (all)

The electronic states of the phosphorus interstitials in phosphorus-implanted copper indium disulfide are analyzed by using molecular orbitals. The result shows that electron transfer from the interstitial phosphorus atom to its neghboringsulfur ions occurs in the ground state. © 1993 The Japan Society of Applied Physics.

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題名: Analysis of the electronic states of phosphorus interstitials in phosphorus-implanted copperindium disulfide by the molecular orbital approach
創作者：: Y.J. Hsu (作者) - National Tsing Hua University
H.L. Hwang (作者) - National Tsing Hua University
學術資源類型: 期刊文章
出版日期: 1993
出版資訊: Japanese Journal of Applied Physics, 卷.32(S3), 頁碼.456-458
語言: 英語

Analysis of the electronic states of phosphorus interstitials in phosphorus-implanted copperindium disulfide by the molecular orbital approach

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