Abstract
Annealing behaviors of dislocation loops formed near the projected range (R p loops) in 150 keV, 5×10 15 /cm 2 As + - implanted (001)Si have been studied by both planview and cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry. Factors influencing the formation and growth of the R p loops, such as annealing temperature and time, as well as single- and two-step annealings have been investigated. The R p loops were observed in samples annealed at 550-900°C for 0.5 h. The loops were also found in samples annealed at 800°C for a time as short as 1 s and as long as 8 h. However, they were not seen in samples annealed at 470°C for 4 h, 500°C for 2 h, or 550°C for 15 min. The annealing behaviors of R p loops in single- and two-step annealed samples and in samples with an oxide capping layer were found to be consistent with the suggestion that their formation is related to the agglomeration of self-interstitials mediated by the presence of a high concentration of electrically inactive arsenic atoms.