Abstract
Both planview and cross-sectional transmission electron microscopy have been applied to study the annealing behaviour of (001) and (111)Si inside miniature size oxide openings implanted with 110 keV BF 2 + to a dose of 2 × 10 15 cm -2 . In (001) samples, dislocations were observed to form at the intersections of the lateral and vertical regrowth fronts. The type and density of residual defects were found to be largely independent of the size of the oxide opening. The effects of lateral growth in (111) samples were found to be much more pronounced than those for (001) samples. The presence of the lateral interface drastically altered the distribution of residual defects. The effects of lateral growth on the distribution of residual defects were found to be more prominent with decreasing size of the oxide opening. © 1991.