Abstract
Angular dependence of x-ray fluorescence techniques have been employed to investigate the effects of thermal annealing at various temperatures ranging from 340 to 387°C on a series of CdTe/CdS heterojunctions. Changes in depth profiles of Te and Cd atoms in the CdS layer as a result of heat treatment has been observed. A simple model is proposed for comparison of the ratio of Te K α to Cd K α fluorescence yield at different annealing temperatures. Our results suggest that the concentration of migrated Te atoms in the CdS layer increases with the annealing temperature, and the Te/Cd ratio in the CdS layer could even become greater than that in CdTe with annealing temperatures higher than 370°C. © 1999 American Institute of Physics.