Abstract
The effects of annealing (in PH 3 /H 2 ) atmosphere on LPE-grown Ga 0.5 In 0.5 P are studied using ex situ and in situ reflectance difference spectral (RDS) features. Both the annealing temperatures and times used are found to have virtually no effect on the bulk optical or structural properties of metalorganic chemical vapor deposition (MOCVD)-grown Ga 0.5 In 0.5 P. For LPE-grown Ga 0.5 In 0.5 P, annealing is found to induce bulk-like RDS features at both E 0 and E 1 with line shapes similar to those observed for MOCVD-grown ordered Ga 0.5 In 0.5 P.