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Antifuse OTP cell in a cross-point array by advanced CMOS FinFET process
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Antifuse OTP cell in a cross-point array by advanced CMOS FinFET process

Ren-Jay Kuo, Fu-Cheng Chang, Ya-Chin King 和 Chrong-Jung Lin
IEEE Transactions on Electron Devices, 卷.66(4), 頁碼.1729-1733
04/2019
DOI: https://doi.org/10.1109/TED.2019.2900282

摘要

Antifuse FinFET gate dielectric breakdown high-κ metal gate (HKMG) Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
A new antifuse one-time programmable (OTP) memory array by the 16-nm FinFET high-κ metal gate process is proposed and demonstrated. The OTP cells are programed by gate dielectric breakdown. The asymmetric I-V characteristics can be achieved by controlling the current compliance level during its programing operation. Based on the diode-like postbreakdown I-V characteristics, a high-density cross-point array without cell selectors is demonstrated, by the advanced FinFET CMOS technology.

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