- Title
- Application of the moving boundary truncated grid method to semiconductor device simulations in the framework of the Boltzmann-Bhatnagar-Gross-Krook equation
- Creators
- Ming Yu Li - National Tsing Hua UniversityChun Yaung Lu - The University of Texas at AustinChia Chun Chou - Department of Chemistry, National Tsing Hua University, Hsinchu, Taiwan
- Grant note
- National Tsing Hua University (http://data.elsevier.com/vocabulary/SciValFunders/501100005057) National Science and Technology Council (http://data.elsevier.com/vocabulary/SciValFunders/100020595) NSTC 113-2113-M-007-020 / National Science and Technology Council (http://data.elsevier.com/vocabulary/SciValFunders/100020595) National Yang Ming Chiao Tung University (http://data.elsevier.com/vocabulary/SciValFunders/501100024990)
- Resource Type
- Journal article
- Date published
- 01/06/2025
- Publication Details
- Physical review. E, Vol.111(6), p.065301
- Language
- English
Journal article
Application of the moving boundary truncated grid method to semiconductor device simulations in the framework of the Boltzmann-Bhatnagar-Gross-Krook equation
Physical review. E, Vol.111(6), p.065301
01/06/2025
PMID: 40745751
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