摘要
This study investigates the electrical mechanisms of the organic thin-film transistor (OTFT) with an asymmetric U-I electrode structure under hot-carrier stress (HCS). The threshold voltage shifts negatively and a dual-channel phenomenon occurs. In addition, the degradation behaviors of the linear and saturated ID-VG transfer curves are different. These are attributed to the non-uniform electric-field and heat distribution, which results in the non-uniform trapped holes in the organic-gate insulator-1 by charge trapping model during HCS. Finally, physical mechanisms based on COMSOL simulations and energy bands are proposed to clarify the degradation phenomena. © 1980-2012 IEEE.
