摘要
Vertical nanostructure heteroepitaxy opens new opportunities for designing next-generation electronic devices due to the enthralling multifunction combinations and the abundant heterointerfaces manipulated effects. In this study, self-assembled heteroepitaxial thin films, vertically aligned metallic LaNiO 3 (LNO) and semiconducting NiO with diverse heterointerfaces, are created and systematically investigated by advanced transmission electron microscopy. With the increase of LaNiO 3 content, the LaNiO 3 phases present as isolated islands encircled by the connected NiO nanoplates and eventually become the continuous matrix with embedded NiO nanopillars. The atomic heterointerface between NiO and LaNiO 3 phases is determined to be [NiO 2 –LaO] LaNiO3 –LaO–[NiO] NiO , in which an extra La–O layer is enriched at the heterointerface. Besides, the formation mechanism of the heterointerface and antiphase boundaries observed in LaNiO 3 phase is discussed. The electrical transport properties at room temperature can be tuned gradually by changing the volume ratio of constituents. The correlation among the insulator-to-metal transition, the carrier types associated with transport behaviors, and the heterostructure evolutions are explored. This study offers a desirable platform to design new multifunctional electronic devices based on the oxide heterojunctions.