摘要
We report ultra-thin 2-nm-, 3-nm-, and 5-nm-thick Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> (HZO) thin films using atomic-level characterization of ferroelectric fin field-effect-transistors (Fe-FinFET). First, the results of high-resolution grazing incidence X-ray diffraction (GI-XRD) using synchrotron radiation (1.5 GeV with a wavelength of 0.155 nm) revealed that the HZO thin films had a clear orthorhombic (o) crystalline phase; even the 2-nm-thick HZO film had this type of phase. In addition, a nano beam diffraction (NBD) confirmed the o phase in HZO. The proposed Fe-FinFETs exhibited sub-60-mV/decade subthreshold slopes (SS) and nearly hysteresis-free behaviors compared with baseline HfO <sub>2</sub> FinFETs. The I <sub>D</sub> -V <sub>G</sub> transfer curves exhibited low I <sub>OFF</sub> and high I <sub>ON</sub> and were nearly free of drain-induced barrier-lowering (DIBL) in the statistical results. When L <sub>G</sub> >W <sub>Ch</sub> (L <sub>G</sub> /W <sub>Ch</sub> >1), most of the Fe-FinFETs exhibited SS < 60 mV/decade.