摘要
An experiment was conducted to confirm the band-to-band tunneling (BTBT) in a novel vertical tunneling field-effect transistor with a monolayer MoS 2 as the channel (MoS 2 -TFET). The application of either positive or negative local top-gate voltages leads to the formation of in-plane/lateral n?n or p?n junctions, respectively. Increasing the gate voltages results in a strong gate-induced doping of the monolayer MoS 2 channel as well as the presence of large internal electric fields. Accordingly, this results in the direct manifestation of a BTBT current and an ambipolar transport in our MoS 2 -TFETs. The MoS 2 was deposited using chemical vapor deposition, a potentially large-scale and practical fabrication technique. The experiment clearly demonstrates the feasibility of current switching via BTBT in a monolayer of MoS 2 , simultaneous improvements in the tunnel barrier profiles as well as the contact between van der Waals materials and metal electrodes can further increase the current densities. This will enable low-power electronic applications through their direct integration with commercial silicon-based CMOS technology for achieving augmented functionalities.