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Atomic and electronic processes during the formation of an Ionic NaCl Monolayer on a Covalent Si(100) Surface
Journal article   Peer reviewed

Atomic and electronic processes during the formation of an Ionic NaCl Monolayer on a Covalent Si(100) Surface

Chan-Yuen Chang, Hong-Dao Li, Shiow-Fon Tsay, Shih-Hsin Chang and Deng-Sung Lin
Journal of Physical Chemistry C, Vol.116(21), pp.11526-11538
31/05/2012

Abstract

An atomic layer of stoichiometric NaCl was formed on a covalent Si(100) surface after two successive half-reactions at room temperature. The first half-reaction due to Cl 2 exposure generates a square array of Cl adatoms with a distance close to that in a NaCl(100) surface plane. By utilizing scanning tunneling microscopy (STM), core-level photoemission spectroscopy, and ab initio density functional theory (DFT) calculations, it was found that progressive deposition of Na in the second-half reaction results in surface-supported Na 3 Cl clusters, one-dimensional cluster chains, and (2 - 2) patches, and eventually turns the Cl-adlayer into a single-terrace, wavy NaCl layer at one monolayer Na coverage. The grown NaCl monolayer rolls over atomic steps like a carpet and covers the entire surface.The atomic and electronic structure of the topmost Si layer underneath the NaCl layer resembles that of the initial silicon surface layer with buckled dimers. Results of the comprehensive investigation together suggest that an ionic NaCl monolayer is very weakly bonded to the covalent substrate and appears nearly free-standing. © 2012 American Chemical Society.

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