Abstract
High-resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi 2 /(111)Si double-heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi 2 /(111)Si interfaces can be systematically deduced from the dichromatic constrained-coincidence-site-lattice patterns. The atomic structures were determined by comparing HRTEM images with computer-simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi 2 and epitaxial TbSi 2 /Si interfaces are discussed.