摘要
2D semiconducting transition metal dichalcogenides (TMDs) are emerging as promising candidates in the pursuit of advancing semiconductor technology. One major challenge for integrating 2D TMD materials into practical applications is developing an epitaxial technique with robust reproducibility for single-oriented growth and thus single-crystal growth. Here, the growth of single-orientated MoS 2 on c-plane sapphire with atomically thin Fe 2 O 3 decoration layers under various growth conditions is demonstrated. The statistical data highlight robust reproducibility, achieving a single orientation ratio of up to 99%. Density functional theory calculations suggest that MoS 2 favors a 0° alignment ((Formula presented.)) on the Fe 2 O 3 (0001) surface. This preference ensures single-oriented growth, even on mirror-reflected exposed surfaces which typically lead to antiparallel domains. Subsequent optical and electrical analyses confirm the uniformity and undoped nature of MoS 2 on Fe 2 O 3 -decorated sapphire, showing its quality is comparable to MoS 2 grown on bared sapphires. The results underscore the potential of Fe 2 O 3 -decorated sapphire as an effective substrate for the consistent and high-quality epitaxial growth of 2D TMDs, illuminating the pathway to epitaxial control of 2D TMD orientation through strategic modulation of crystalline atomic surfaces.