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Atomically resolved mapping of polarization and electric fields across ferroelectric/oxide interfaces by z-contrast imaging
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Atomically resolved mapping of polarization and electric fields across ferroelectric/oxide interfaces by z-contrast imaging

Hye Jung Chang, Sergei V. Kalinin, Anna N. Morozovska, Mark Huijben, Ying-Hao Chu, Pu Yu, Ramamoorthy Ramesh, Evgeny A. Eliseev, George S. Svechnikov, Stephen J. Pennycook, …
Advanced Materials, 卷.23(21), 頁碼.2474-2479
06/2011
DOI: https://doi.org/10.1002/adma.201004641
PMID: 21538586

摘要

Materials Science (all) Mechanics of Materials Mechanical Engineering
Direct atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy(STEM) (a STEM image, b corresponding displacement profile) is combined with Landau Ginsburg Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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