摘要
Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ~1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulkchannel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ~0.47 cm2 V-1 s-1, a high on/ off current ratio of ~106, low off current of <10-12 A, and a subthreshold swing of ~2.5 V decade-1, which was improved compared with the conventional p-channel SnO TFTs. We also fabricated metal-liquid printing-based n-channel oxide TFTs such as n-channel SnO2 and In2O3-TFTs and developed ultrathinchannel oxide-TFT-based low-power complementary inverter circuits with the developed p-channel SnO TFTs. The full swing of voltage-transfer characteristics with a voltage gain of ~10 and a power dissipation of <4 nW for p-SnO/n-SnO2 and ~120 and <2 nW for p-SnO/n-In2O3-CMOS inverters were successfully demonstrated.