Abstract
We investigated the micro-structural and electrical behavior of Ni/Au contacts on GaN(0001) during annealing in N 2 and in air. The formation of a Ni 4 N phase deteriorates the contact resistivity if annealed in N 2 . Annealing in air, however, dramatically improves it. The oxidation, by creating the more energy favorable Ni-O bonds, seems to be the recipe to successfully suppress the formation of Ni 4 N, which otherwise would be enhanced significantly by the presence of Au as a catalyst.