Abstract
Au(Si)-filled Β- Ga2 O3 nanotubes were fabricated by an effective one-step chemical vapor deposition method. The Au(Si) interior was introduced by capillarity. Linear thermal expansion of Au(Si) with a coefficient of thermal expansion (CTE) as high as 1.5× 10-4 (1K) within single crystal Ga2 O3 shell up to 800° C was observed by in situ transmission electron microscopy. The high CTE is correlated to partial melting of Au(Si). As Ga2 O3 possesses excellent thermal and chemical stability, the structure can be used as a wide range high-temperature nanothermometer within localized regions of nanosystems. c 2008 American Institute of Physics.