Abstract
Owing to the delayed introduction of high-k storage dielectric for trench DRAM, a new technology to extend the existing NO storage dielectric becomes a prerequisite. For trench DRAM, the nitride film of NO-based storage dielectric has been proved to possess higher quality by proper N 2 O treatment, which enables further reduction in nitride thickness and extension of scaling limit for the existing storage dielectric. A 164% leakage current improvement without sacrificing the cell capacitance can be achieved through this process, while keeping the outstanding reliability performance of less than 438 ppm failure rate after a ten-year operation. Most importantly, this new process can be fully integrated into incumbent furnace process, which means that no additional tool investment is required, and it is crucial for trench DRAM manufacturers to maintain their competitive advantage before the high-k material prevails at 65 nm technology node. © 2008 IEEE.