摘要
In this study, we demonstrate a high-performance ferroelectric GAAFET (Fe-GAAFET) memory utilizing a 12-nm HfO2/ZrO2 superlattice (SL-HZO) ferroelectric gate layer and low-temperature polycrystalline silicon (LTPS) formed by green laser crystallization. By employing microwave annealing (MWA), the process successfully achieves back-end-of-line (BEOL) processes. The LTPS/SL-HZO Fe-GAAFET memory exhibits stable ferroelectric orthorhombic phase (o-phase) with remarkable memory window (MW) of 1.55 V under ±3.5 V, 1μ s pulse operation. The reliability tests show excellent endurance, retaining a MW of 0.90 V after 10⁶ program/erase (P/E) cycles. Furthermore, the device exhibits strong data retention, with a MW of 1.20 V maintained after 10⁴ s and a projected lifetime exceeding 10 years. These outstanding performances indicate the potential for future monolithic 3D integration applications.