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Band engineering magneto-resistance effect in Co:a-C films
Journal article   Peer reviewed

Band engineering magneto-resistance effect in Co:a-C films

P.Y. Chuang, J.C.A. Huang, P.E. Lu, H.S. Hsu, S.J. Sun, Y.W. Yang, J.M. Chen and C.H. Lee
Carbon, Vol.81(1), pp.821-825
2015

Abstract

Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were deposited on quartz glass by radio frequency magnetron sputtering. A bias-dependent positive magnetoresistance (PMR) with a peak at a particular voltage was observed. The electronic structures were examined by ultraviolet photoelectron spectroscopy and X-ray absorption near edge spectroscopy. The spectroscopic results reveal that Co doping promotes the graphitization in the a-C matrix and the 3d orbital of Co is hybridized with sp2 states (DOSs) in the Co:a-C. The PMR effect is related to the modulation of the DOS of the Co:a-C films at the Fermi level by Zeeman splitting.

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