Abstract
Beryllium-doped Ga 0.47 In 0.53 As and Al 0.48 In 0.52 As epitaxial layers lattice matched to InP substrates have been grown by molecular-beam epitaxy (MBE). Doping levels as high as 2.5×10 19 cm -3 have been achieved for both p-type Ga 0.47 In 0.53 As and Al 0.48 In 0.52 As. The maximum carrier concentration is an order of magnitude higher for these Be-doped layers than for those doped with Mn. The carrier concentration varies proportionally with the arrival rate of Be and the sticking coefficient of Be is estimated to be unity. Under our growth conditions, the carrier concentrations in Ga 0.47 In 0.53 As and Al 0.48 In 0.52 As layers are identical for the same Be arrival rate. Mobility studies showed that MBE grown Be-doped Ga 0.47 In 0.53 As layers are comparable to the best reported results obtained with liquid-phase epitaxy. When Sn was used as the n-type dopant, both Ga 0.47 In 0.53 As and Al 0.48 In 0.52 As p-n junction diodes were fabricated and evaluated.