BiCaSrCuO-Semiconductor interface formation processes

Y. Hwu; L. Lozzi; S. La Rosa; M. Marsi; M. Onellion; H. Berger; F. Gozzo; F. Lévy; G. Margaritondo

doi:10.1016/0038-1098(91)90245-Q

BiCaSrCuO-Semiconductor interface formation processes

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BiCaSrCuO-Semiconductor interface formation processes

Y. Hwu, L. Lozzi, S. La Rosa, M. Marsi, M. Onellion, H. Berger, F. Gozzo, F. Lévy 和 G. Margaritondo

Solid State Communications, 卷.78(10), 頁碼.869-872

1991

DOI: https://doi.org/10.1016/0038-1098(91)90245-Q

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Chemistry (all)

Condensed Matter Physics

Materials Chemistry

The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi. {A figure is presented}. © 1991.

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題名: BiCaSrCuO-Semiconductor interface formation processes
翻譯題名: BiCaSrCuO-Semiconductor interface formation processes
創作者：: Y. Hwu (作者) - University of Wisconsin–Madison
L. Lozzi (作者) - University of Wisconsin–Madison
S. La Rosa (作者) - University of Wisconsin–Madison
M. Marsi (作者) - University of Wisconsin–Madison
M. Onellion (作者) - University of Wisconsin–Madison
H. Berger (作者) - École Polytechnique Fédérale de Lausanne
F. Gozzo (作者) - École Polytechnique Fédérale de Lausanne
F. Lévy (作者) - École Polytechnique Fédérale de Lausanne
G. Margaritondo (作者) - École Polytechnique Fédérale de Lausanne
學術資源類型: 期刊文章
出版日期: 1991
出版資訊: Solid State Communications, 卷.78(10), 頁碼.869-872
語言: 英語

BiCaSrCuO-Semiconductor interface formation processes

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