Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

Journal article

Jian-Shiou Huang, Yung-Chang Lin, Hung-Wei Tsai, Wen-Chun Yen, Chia-Wei Chen, Chi-Yuan Lee, Tsung-Shune Chin and Yu-Lun Chueh

Advanced Electronic Materials, Vol.1(8), 1500061

2015

Abstract

indium tin oxide

oxygen vacancies

point contacts

resistive random access memory

resistive switching

transparent conductive oxide

1 Record Views

Title: Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer
Creators - without role: Jian-Shiou Huang - Department of Materials Science and Engineering , National Tsing Hua University
Yung-Chang Lin - National Institute of Advanced Industrial Science and Technology
Hung-Wei Tsai - Department of Materials Science and Engineering , National Tsing Hua University
Wen-Chun Yen - National Tsing Hua University
Chia-Wei Chen - Department of Materials Science and Engineering , National Tsing Hua University
Chi-Yuan Lee - Department of Materials Science and Engineering , National Tsing Hua University
Tsung-Shune Chin - Feng Chia University
Yu-Lun Chueh - Department of Materials Science and Engineering , National Tsing Hua University
Publication Details: Advanced Electronic Materials, Vol.1(8), 1500061
Identifiers: 9957775433006774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article