摘要
The authors investigated spin dependent transport through FeGaAsFe tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of FeGaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an epitaxial FeGaAs (001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at an FeGaAs interface and is relevant for spin injection experiments. © 2006 American Institute of Physics.