摘要
Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT drain-source current showed a rapid response of less than 5 s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1 to 10 ngml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaNGaN HEMTs for botulinum toxin detection. © 2008 American Institute of Physics.