Abstract
The electronic structure of Ag films on Ge(III) was investigated focusing on the coupling between the Ag valence electrons and the Ge substrate states. The subband dispersion of a quantum well state, as it crosses the edge of the Ge confinement gap was mapped by angle-resolved photoemission. It was found that the quantum well peak splits into two, with an appearance that resembles a two-level anticrossing. It was also found that the Ag states within the Ge gap formed fully confined quantum well states, and the Ag states outside the Ge gap formed partially confined quantum well resonances.