摘要
Antibody-functionalized, Au-gated AlGaNGaN high electron mobility transistors (HEMTs) were used to detect c-erbB-2, which is a breast cancer marker. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaNGaN HEMT drain-source current showed a rapid response of less than 5 s when target c-erbB-2 antigen in a buffer at clinically relevant concentrations was added to the antibody-immobilized surface. We could detect a range of concentrations from 16.7 to 0.25 μgml. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaNGaN HEMTs for breast cancer screening. © 2008 American Institute of Physics.