摘要
Microelectromechanical systems (MEMS) are in widespread commercial use due to their compact size, high performance, and low cost. MEMS resonators have emerged as front runners for sensing (accelerometers, gyroscopes, and particulate matter) and frequency (RF front-end, filters, timing, and frequency source) applications. The excellent stability, resolution, and accuracy of resonators lead them an ideal candidate for sensor implementation. The CMOS-MEMS technology allows for rapid, large-scale, and low-cost manufacturing. Thermal–piezoresistive resonators (TPRs) are promising candidates due to their favorable potential with scaling and robust performance in the ambient environment. A detailed finite element method (FEM) simulation flow is presented along with a mathematical model for device optimization. The devices were fabricated with the commercial CMOS technology utilizing the front-end-of-line (FEOL) polysilicon and back-end-of-line (BEOL) materials like silicon dioxide and interconnect metal. The flexibility of selective material placement in layout and complex routing using multi-metal interconnect is employed to develop a balanced TPR design at 2 MHz. A 5-MHz bulk mode TPR was designed for mass sensing application. The fabricated devices were characterized, and their performance is compared with other state-of-the-art works. Finally, the developed devices were used in real-world applications for mass sensing and pressure sensing. The device achieved 20 kHz/ng. The TPR devices combine principles of Pirani gauge and resonant sensors for improving the sensing range from 2 to 760 Torr (1 atm).