Abstract
Electron scattering limits electron-beam lithography to 250 nm images in less than 100 nm of electron resist, despite the resolution capability in the range of nanometers (nm) of electron microscopes. Optical beam scattering is relatively insignificant, but it is difficult to focus and scan an optical beam to less than 500 nm. Here, a proper combination of the advantages of the two types of exposure system makes it possible to produce 50 nm images with high aspect ratio for fabrication of integrated circuit masks or devices.