Abstract
Modulation-doped Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As single period heterostructures were prepared by molecular beam epitaxy. Current versus electrical field characteristics were investigated in a lattice temperature range of 10-300 K. Measurements were performed at electric field strengths as high as 2 kV/cm which is comparable to the field strengths attained in normally-off field effect transistors. Mobilities as high as 8960 cm 2 /Vs at 300 K, 61 100 cm 2 /Vs at 75 K, and 93 000 cm 2 /Vs at 10 K were measured and were found to be proportional to temperature approximately as μ∝T -1.74 . Mobility enhancement was observed in the single period Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As system irrespective of the relative position of the larger band gap Si-doped Al 0.48 In 0.52 As.