摘要
In this study, a novel approach of fabricating lateral carbon nanotube (CNT) emitters on an insulating substrate with an integrated metallic anode utilizing a dual-mask microfabrication process is presented. The selective synthesis of lateral CNTs was achieved with a two-step microwave plasma-enhanced chemical vapor deposition involving a hydrogen plasma treatment prior to CNT synthesis. CNTs were found to grow laterally and along the edges of a trimetal layer containing a sandwiched catalytic thin film. Field emission characterization showed that the lateral CNT emitters had a turn-on field of 4.0 V/μm and current flow of 1.0 μA at ∼5.5 V/μm. Overall, the present study demonstrates a viable approach for fabricating lateral emitters with high aspect ratio and integrated with a metallic anode, a device potentially useful for vacuum microelectronics applications. © 2007 American Vacuum Society.