摘要
A novel vacuum field emission differential amplifier integrated circuit (VFE diff-amp IC) utilising carbon nanotube (CNT) emitters is presented. A dual-mask microfabrication process is employed to achieve the VFE diff-amp IC by integrating identical CNT VFE transistors with built-in split gates and anodes. The pair of integrated amplifiers shows low gate turn-on voltage, large DC gain, a reasonable transconductance, and a good common-mode rejection ratio. The approach demonstrates a new way for development of temperature- and radiation-tolerant VFE integrated microelectronics.