摘要
A hexagonal boron nitride interlayer is grown on n-type SiC by plasma-enhanced chemical vapor deposition. Vertical metal-insulator-semiconductor diodes are fabricated and exhibited clear rectification, where I-on/I-off is similar to 10(9) at 300 K declining to similar to 10(4) at 475 K. We report a leakage current of similar to 10(-12) A ( 6 x 10(-9) A /cm(2) ) and a R-ON of 33 m Omega cm(2). The 1/C-2 built-in voltage (V-bi) and threshold voltage (V-th) values are 2.4 and 2.3 V, respectively. The diode forward current mechanism is evaluated using the thermionic emission inhomogeneous barrier height model. The interface state density distribution (Nss ) is estimated as 2 x 10(13) eV(-1) cm(-2) from the forward bias I-V condition.