摘要
Electron-irradiation increase of nonequilibrium carrier lifetime was studied as a function of hole concentration in Mg-doped GaN. Temperature-dependent cathodoluminescence (CL) studies yielded activation energies of 344, 326, 237, and 197 meV for samples with hole concentrations of 2× 1016, 9× 1016, 3× 1018, and 7× 1018 cm-3, respectively. The systematic decay of activation energy with carrier concentration was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in irradiation-induced lifetime changes. © 2007 American Institute of Physics.